FDB14N30TM
MOSFET N-CH 300V 14A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDB14N30TM is an N-Channel UniFET™ MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 300V and a continuous Drain Current (Id) of 14A at 25°C, with a maximum power dissipation of 140W (Tc). The Rds On is specified at a maximum of 290mOhm at 7A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 25 nC (Max) at 10V and an Input Capacitance (Ciss) of 1060 pF (Max) at 25V. This MOSFET utilizes a Metal Oxide technology and is housed in a surface mount TO-263-3, D2PAK package, supplied on tape and reel. The operating temperature range is -55°C to 150°C (TJ). This component is commonly found in industrial and consumer electronics requiring robust power management.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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